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1

Reflection high energy electron diffraction measurements of molecular beam epitaxially grown GaAs and InGaAs on GaAs(111)

A.M. Dabiran, P.I. Cohen, J.E. Angelo, W.W. Gerberich

Journal:

Thin Solid Films

Year:

1993

Language:

english

File:

PDF, 618 KB

english, 1993

2

Influence of [sup 60]Co Î³-rays on dc performance of AlGaN/GaN high electron mobility transistors

Luo, B., Johnson, J. W., Ren, F., Allums, K. K., Abernathy, C. R., Pearton, S. J., Dabiran, A. M., Wowchack, A. M., Polley, C. J., Chow, P. P., Schoenfeld, D., Baca, A. G.

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 243 KB

english, 2002

3

Development of enhancement mode AlN/GaN high electron mobility transistors

Chang, C. Y., Pearton, S. J., Lo, C. F., Ren, F., Kravchenko, I. I., Dabiran, A. M., Wowchak, A. M., Cui, B., Chow, P. P.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 462 KB

english, 2009

4

Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures

Dabiran, A. M., Wowchak, A. M., Osinsky, A., Xie, J., Hertog, B., Cui, B., Look, D. C., Chow, P. P.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 536 KB

english, 2008

5

Dependence of structural and electrical properties of AlGaN/GaN HEMT on Si(111) on buffer growth conditions by MBE

Mukhopadhyay, Partha, Chowdhury, Subhra, Wowchak, Andrew, Dabiran, Amir, Chow, Peter, Biswas, Dhrubes

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2013

Language:

english

File:

PDF, 1.41 MB

english, 2013

6

Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

Mukhopadhyay, Partha, Bag, Ankush, Gomes, Umesh, Banerjee, Utsav, Ghosh, Saptarsi, Kabi, Sanjib, Chang, Edward Y. I., Dabiran, Amir, Chow, Peter, Biswas, Dhrubes

Journal:

Journal of Electronic Materials

Year:

2014

Language:

english

File:

PDF, 1.53 MB

english, 2014

7

Ti/Al/Mo/Au Ohmic contacts to all-binary AlN/GaN high electron mobility transistors

Wang, Liang, Adesida, Ilesanmi, Dabiran, Amir M., Wowchak, Andrew M., Chow, Peter P.

Journal:

Applied Physics Letters

Year:

2008

Language:

english

File:

PDF, 605 KB

english, 2008

8

Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors

Fitch, R. C., Gillespie, J. K., Moser, N., Jessen, G., Jenkins, T., Dettmer, R., Via, D., Crespo, A., Dabiran, A. M., Chow, P. P., Osinsky, A., La Roche, J. R., Ren, F., Pearton, S. J.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2004

Language:

english

File:

PDF, 970 KB

english, 2004

9

Passivation of AlN∕GaN high electron mobility transistor using ozone treatment

Lo, C. F., Chang, C. Y., Pearton, S. J., Kravchenko, I. I., Dabiran, A. M., Wowchak, A. M., Cui, B., Chow, P. P., Ren, F.

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2010

Language:

english

File:

PDF, 624 KB

english, 2010

10

Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yugova, T. G., Dabiran, A. M., Wowchak, A. M., Cui, B., Osinsky, A. V., Chow, P. P., Pearton, S. J., Scherbatchev, K. D., Bublik, V. T.

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 774 KB

english, 2008

11

Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

Jia, Ye, Wallace, Joshua S., Qin, Yueling, Gardella, Joseph A., Dabiran, Amir M., Singisetti, Uttam

Journal:

Journal of Electronic Materials

Year:

2016

Language:

english

File:

PDF, 1.31 MB

english, 2016

12

Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas

Ekinci, Huseyin, Kuryatkov, Vladimir V., Forgey, Chris, Dabiran, Amir, Jorgenson, Robert, Nikishin, Sergey A.

Journal:

Year:

2018

Language:

english

File:

PDF, 1.76 MB

english, 2018

13

Surface reconstructions and growth mode transitions of AlAs(100)

A.M. Dabiran, P.I. Cohen

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 415 KB

english, 1995

14

Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes

T.J. Anderson, H.T. Wang, B.S. Kang, F. Ren, S.J. Pearton, A. Osinsky, Amir Dabiran, P.P. Chow

Journal:

Applied Surface Science

Year:

2008

Language:

english

File:

PDF, 452 KB

english, 2008

15

Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors

K.H. Chen, H.W. Wang, B.S. Kang, C.Y. Chang, Y.L. Wang, T.P. Lele, F. Ren, S.J. Pearton, A. Dabiran, A. Osinsky, P.P. Chow

Journal:

Sensors and Actuators B: Chemical

Year:

2008

Language:

english

File:

PDF, 488 KB

english, 2008

16

Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors

X. Yu, C. Li, Z.N. Low, J. Lin, T.J. Anderson, H.T. Wang, F. Ren, Y.L. Wang, C.Y. Chang, S.J. Pearton, C.H. Hsu, A. Osinsky, A. Dabiran, P. Chow, C. Balaban, J. Painter

Journal:

Sensors and Actuators B: Chemical

Year:

2008

Language:

english

File:

PDF, 1.31 MB

english, 2008

17

Electron trapping effects in C- and Fe-doped GaN and AlGaN

Olena Lopatiuk, Andrei Osinsky, Amir Dabiran, Konstantin Gartsman, Isai Feldman, Leonid Chernyak

Journal:

Solid-State Electronics

Year:

2005

Language:

english

File:

PDF, 346 KB

english, 2005

18

Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE

J.W Johnson, A.G Baca, R.D Briggs, R.J Shul, J.R Wendt, C Monier, F Ren, S.J Pearton, A.M Dabiran, A.M Wowchack, C.J Polley, P.P Chow

Journal:

Solid-State Electronics

Year:

2001

Language:

english

File:

PDF, 1.09 MB

english, 2001

19

Surface passivation of AlGaN/GaN HEMTs using MBE-grown MgO or Sc2O3

B Luo, J.W Johnson, B.P Gila, A Onstine, C.R Abernathy, F Ren, S.J Pearton, A.G Baca, A.M Dabiran, A.M Wowchack, P.P Chow

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 665 KB

english, 2002

20

0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess length

A Kuliev, V Kumar, R Schwindt, D Selvanathan, A.M Dabiran, P Chow, I Adesida

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 335 KB

english, 2003

21

Impact of aluminum concentration and magnesium doping on the effect of electron injection in p-AlxGa1−xN

William Burdett, Andrei Osinsky, Vladimir Kotlyarov, Peter Chow, Amir Dabiran, Leonid Chernyak

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 108 KB

english, 2003

22

Influence of layer doping and thickness on predicted performance of NPN AlGaN/GaN HBTs

K.P. Lee, A. Dabiran, P.P. Chow, S.J. Pearton, F. Ren

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 598 KB

english, 2003

23

Effects of base structure on performance of GaN-based heterojunction bipolar transistors

K.P Lee, F Ren, S.J Pearton, A.M Dabiran, P.P Chow

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 310 KB

english, 2003

24

Simulations of InGaN-base heterojunction bipolar transistors

K.P. Lee, F. Ren, S.J. Pearton, A.M. Dabiran, P.P. Chow

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 354 KB

english, 2003

25

Temperature dependence of pnp GaN/InGaN HBT performance

K.P. Lee, A.M. Dabiran, P.P. Chow, A. Osinsky, S.J. Pearton, F. Ren

Journal:

Solid-State Electronics

Year:

2004

Language:

english

File:

PDF, 483 KB

english, 2004

26

RF performance of GaN-based npn bipolar transistors

K.P. Lee, A. Dabiran, A. Osinsky, P.P. Chow, S.J. Pearton, F. Ren

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 254 KB

english, 2003

27

Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers

J.K. Gillespie, R.C. Fitch, N. Moser, T. Jenkins, J. Sewell, D. Via, A. Crespo, A.M. Dabiran, P.P. Chow, A. Osinsky, M.A. Mastro, D. Tsvetkov, V. Soukhoveev, A. Usikov, V. Dmitriev, B. Luo, S.J. Peart

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 112 KB

english, 2003

28

Normally-on/off AlN/GaN high electron mobility transistors

C. Y. Chang, C. F. Lo, F. Ren, S. J. Pearton, I. I. Kravchenko, A. M. Dabiran, B. Cui, P. P. Chow

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 161 KB

english, 2010

29

Detection of vitellogenin, an endocrine disrupter biomarker, using AlGaN/GaN high electron mobility transistors

Byung Hwan Chu, C. Y. Chang, Kevin Kroll, Nancy Denslow, Yu-Lin Wang, S. J. Pearton, Jenshan Lin, A. M. Dabiran, A. M. Wowchak, B. Cui, P. P. Chow, J. W. Johnson, P. Rajagopal, J. C. Roberts, E. L. Pi

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 321 KB

english, 2011

30

High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors

B. Luo, J. W. Johnson, F. Ren, K. K. Allums, C. R. Abernathy, S. J. Pearton, R. Dwivedi, T. N. Fogarty, R. Wilkins, A. M. Dabiran, A. M. Wowchack, C. J. Polley, P. P. Chow, A. G. Baca

Journal:

Journal of Electronic Materials

Year:

2002

Language:

english

File:

PDF, 352 KB

english, 2002

31

Development of MgZnO-ZnO-AlGaN heterostructures for ultraviolet light emitting applications

J. W. Dong, A. Osinsky, B. Hertog, A. M. Dabiran, P. P. Chow, Y. W. Heo, D. P. Norton, S. J. Pearton

Journal:

Journal of Electronic Materials

Year:

2005

Language:

english

File:

PDF, 887 KB

english, 2005

32

Improved Long-Term Thermal Stability At 350°C Of TiB2–Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors

Rohit Khanna, L. Stafford, S.J. Pearton, T.J. Anderson, F. Ren, I.I. Kravchenko, Amir Dabiran, A. Osinsky, Joon Yeob Lee, Kwan-Young Lee, Jihyun Kim

Journal:

Journal of Electronic Materials

Year:

2007

Language:

english

File:

PDF, 462 KB

english, 2007

33

Electrical properties of undoped bulk ZnO substrates

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, S. J. Pearton, D. P. Norton, A. Osinsky, Amir Dabiran

Journal:

Journal of Electronic Materials

Year:

2006

Language:

english

File:

PDF, 186 KB

english, 2006

34

In situcontrol of gan growth by molecular beam epitaxy

R. Held, D. E. Crawford, A. M. Johnston, A. M. Dabiran, P. I. Cohen

Journal:

Journal of Electronic Materials

Year:

1997

Language:

english

File:

PDF, 1.36 MB

english, 1997

35

Optical and morphological properties of MBE grown wurtzite CdxZn1−xO thin films

J.W. Mares, F.R. Ruhge, A.V. Thompson, P.G. Kik, A. Osinsky, B. Hertog, A.M. Dabiran, P.P. Chow, W.V. Schoenfeld

Journal:

Optical Materials

Year:

2007

Language:

english

File:

PDF, 340 KB

english, 2007

36

Long-term stability study of botulinum toxin detection with AlGaN/GaN high electron mobility transistor based sensors

Yu-Lin Wang, B.H. Chu, C.Y. Chang, C.F. Lo, S.J. Pearton, A. Dabiran, P.P. Chow, F. Ren

Journal:

Sensors and Actuators B: Chemical

Year:

2010

Language:

english

File:

PDF, 451 KB

english, 2010

37

Quality of life and its relation to sociodemographic factors among elderly people living in Tehran

Mohammad Ali Abbasimoghadam, Soheila Dabiran, Reza Safdari, Kurosh Djafarian

Journal:

Geriatrics & Gerontology International

Year:

2009

Language:

english

File:

PDF, 143 KB

english, 2009

38

Thermal emittance and response time measurements of a GaN photocathode

Bazarov, Ivan V., Dunham, Bruce M., Liu, Xianghong, Virgo, Matt, Dabiran, Amir M., Hannon, Fay, Sayed, Hisham

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 336 KB

english, 2009

39

Enhanced electroluminescence from ZnO-based heterojunction light-emitting diodes by hydrogen plasma treatment

S. G. Zhang, X. W. Zhang, J. X. Wang, J. B. You, Z. G. Yin, J. J. Dong, B. Cui, A. M. Wowchak, A. M. Dabiran, P. P. Chow

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2011

Language:

english

File:

PDF, 218 KB

english, 2011

40

Injection and Avalanche Electroluminescence of Multiple Quantum Wells

Sheng-Kun Zhang, Wubao Wang, Alfano, R.R., Dabiran, A.M., Osinsky, A., Wowchak, A.M., Hertog, B., Chow, P.P.

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Year:

2008

Language:

english

File:

PDF, 175 KB

english, 2008

41

SPIE Proceedings [SPIE Astronomical Telescopes and Instrumentation: Synergies Between Ground and Space - Marseille, France (Monday 23 June 2008)] High Energy, Optical, and Infrared Detectors for Astronomy III - Gallium nitride photocathode development for imaging detectors

Siegmund, Oswald H. W., Tremsin, Anton S., Vallerga, John V., McPhate, Jason B., Hull, Jeffrey S., Malloy, James, Dabiran, Amir M., Dorn, David A., Holland, Andrew D.

Year:

2008

Language:

english

File:

PDF, 1.03 MB

english, 2008

42

Band gap properties of Zn1-xCdxO alloys grown by molecular-beam epitaxy

Wang, X. J., Buyanova, I. A., Chen, W. M., Izadifard, M., Rawal, S., Norton, D. P., Pearton, S. J., Osinsky, A., Dong, J. W., Dabiran, Amir

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 474 KB

english, 2006

43

Nucleation, growth and magnetic properties of epitaxial FeAl films on AlAsGaAs

B.E. Ishaug, S.M. Seutter, A.M. Dabiran, P.I. Cohen, R.F.C. Farrow, D. Weller, S.S.P. Parkin

Journal:

Surface Science

Year:

1997

Language:

english

File:

PDF, 618 KB

english, 1997

44

Step edge barriers versus step edge relaxation in GaAs:Sn molecular beam epitaxy

A.M. Dabiran, S.M. Seutter, S. Stoyanov, M.C. Bartelt, J.W. Evans, P.I. Cohen

Journal:

Surface Science

Year:

1999

Language:

english

File:

PDF, 736 KB

english, 1999

45

Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium

Taking, S., Banerjee, A., Zhou, H., Li, X., Khokhar, A.Z., Oxland, R., McGregor, I., Bentley, S., Rahman, F., Thayne, I., Dabiran, A.M., Wowchak, A.M., Cui, B., Wasige, E.

Journal:

Electronics Letters

Year:

2010

Language:

english

File:

PDF, 208 KB

english, 2010

46

TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures

Zhou, Lin, Chang, C. Y., Pearton, S. J., Ren, F., Dabiran, Amir, Smith, David. J.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 2.06 MB

english, 2010

47

Electrochemical potential oscillations of the two-dimensional electron gas in GaAs/AlGaAs heterostructures in high magnetic fields

A.M. Dabiran, R.T. Zeller, F.F. Fang, S.L. Wright, P.J. Stiles

Journal:

Surface Science

Year:

1988

Language:

english

File:

PDF, 507 KB

english, 1988

48

Floating gate technique as a thermodynamic probe of two-dimensional electron systems

A.M. Dabiran, F.F. Fang, T.P. Smith III, P.J. Stiles

Journal:

Surface Science

Year:

1990

Language:

english

File:

PDF, 262 KB

english, 1990

49

Al and Ga diffusion barriers in molecular beam epitaxy

A.M. Dabiran, S.K. Nair, H.D. He, K.M. Chen, P.I. Cohen

Journal:

Surface Science

Year:

1993

Language:

english

File:

PDF, 904 KB

english, 1993

50

688 IN VITRO COLONIZATION OF SPERMATOGONIAL STEM CELLS: THE EFFECT OF PATIENT'S CLINICAL CHARACTERISTICS AND TESTICULAR HISTOLOGY

M.R. Nowroozi, H. Ahmadi, S. Rafiian, T. Mirzapour, S. Dabiran, M. Movahedin

Journal:

European Urology Supplements

Year:

2011

Language:

english

File:

PDF, 196 KB

english, 2011

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